PART |
Description |
Maker |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
IRG4PC40FPBF IRG4PC40FPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
|
International Rectifier
|
AP28G45GEM |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR 450 V, N-CHANNEL IGBT
|
Advanced Power Electronics, Corp. Advanced Power Electronics Corp.
|
IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A) INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
AP28G45EM |
N-CHANNEL INSULATED GATE 450 V, N-CHANNEL IGBT
|
Advanced Power Electronics, Corp. Advanced Power Electronics Corp.
|
MSAHX60F60A MSAGX60F60A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
10N70-C |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Unisonic Technologies
|
AP26G40GEO-HF |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|
AP50GT60SW-HF |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|
3N50K-MK 3N50KG-TA3-T 3N50KG-TF1-T 3N50KG-TF2-T 3N |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Unisonic Technologies
|