PART |
Description |
Maker |
CMPSH-3SE CMPSH-3AE CMPSH-3CE CMPSH-3E |
SMD Schottky Diode Dual: High Current: Common Cathode SMD Schottky Diode Dual: High Current: In Series SMD Schottky Diode Single: High Current SMD Schottky Diode Dual: High Current: Common Anode ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
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CENTRAL[Central Semiconductor Corp]
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CMPD1001 CMPD1001A CMPD1001S PD1001A |
HIGH CURRENT SWITCHING DIODE
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CENTRAL[Central Semiconductor Corp]
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JAN1N5300U JANS1N5314UR-1 1N5283UR-1 1N5284UR-1 1N |
Current Limiter Diode Single Inverter Gate 5-SOT-23 -40 to 85 1.5 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.43 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB 4-Pin DIP Phototransistor Output Optocoupler 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 3.6 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.27 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 4.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.33 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.91 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.39 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB Pulse-Width-Modulation (Pwm) Control Circuit 16-SOIC 0 to 70 CURRENT REGULATOR DIODES
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MICROSEMI[Microsemi Corporation] Microsemi, Corp. MICROSEMI CORP-LAWRENCE
|
CPH5504 |
High-Current Switching Applications 大电流开关应 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications
|
Sanyo Electric Co., Ltd. Sanyo Semicon Device
|
IKW30N65ES5 IKW30N65ES5-15 |
high Speed soft switching IGBT with full current rated RAPID 1 diode
|
Infineon Technologies A...
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2SK2038 K2038 |
2SK2038 N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS) TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5A I(D),TO-247VAR From old datasheet system N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS) N通道马鞍山型(高速,高电流开关应用)
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Toshiba. TOSHIBA[Toshiba Semiconductor] Toshiba, Corp.
|
CMPD2004S CMPD2003 CMPD2003C CMPD2003S CMPD2004 CM |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE SMD Switching Diode Dual: High Voltage: Common Anode
|
CENTRAL[Central Semiconductor Corp]
|
2SC5175 E001059 |
NPN EPITAXIAL TYPE (HIHG CURRENT SWITCHING APPLICATIONS) npn型外延型HIHG电流开关应用) HIGH CURRENT SWITCHING APPLICATIONS From old datasheet system
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Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
2SK3084 EA09398 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) N通道马鞍山型(高速,大电流开关,斩波调压器,DC - DC变换器和电机驱动应用 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS From old datasheet system
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Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
BAS70-04S Q62702-A3468 BAS7004S |
CSCA-A Series Hall-effect based, open-loop current sensor, Molex-type connector, 100 A rms nominal, ±300 A range Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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BY329X1500 BY329X-1500S BY329X-1500 BY329X-1500S12 |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes Damper diode fast, high-voltage Damper diode fast/ high-voltage Damper diodes fast, high-voltage - I<sub>FRM</sub>: 16 A; I<sub>O (AV)</sub>: 10 A; V<sub>RRM</sub>: 1500 V; Package: SOD113 (TO-220F); Container: Horizontal, Rail Pack
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http:// NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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