| PART |
Description |
Maker |
| PRHMB200A61 |
200A 600V
|
Nihon Inter Electronics Corporation
|
| 7MBP200RA060 |
IGBT-IPM(600V/200A)
|
FUJI[Fuji Electric]
|
| PRHMB200A6 |
IGBT MODULE Chopper 200A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| PBMB200E6 |
Full Bridge IGBT Module 200A/600V
|
Nihon Inter Electronics Corporation
|
| 7MBP200VEA060-50 |
IGBT MODULE (V series) 600V / 200A / IPM
|
Fuji Electric
|
| 6MBP200VEA060-50 |
IGBT MODULE (V series) 600V / 200A / IPM
|
Fuji Electric
|
| 2MBI200-120-01 2MBI200NB-120-01 |
1200V / 200A 2 in one-package
1200V / 200A 2 in one-package 1200 200安培在一2级封
IGBT module
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 201CNQ045 201CNQ 201CNQ035 201CNQ040 |
SCHOTTKY RECTIFIER
35V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
40V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
45V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
|
IRF[International Rectifier]
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| 203DMQ080 203DMQ100 |
80V 200A Schottky DOUBLER Diode in a TO-244AB Isolated package
100V 200A Schottky DOUBLER Diode in a TO-244AB Isolated package
|
International Rectifier
|
| 201CNQ020 201CNQ030 200CNQ030 |
V(rwm): 20V; 200A schottky center tap rectifier module
V(rwm): 30V; 200A schottky center tap rectifier module
|
International Rectifier
|
| ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL |
8A, 600V Stealth Single Diode
8A, 600V Stealth Diode
8A, 600V Stealth⑩ Diode
8A, 600V StealthDiode
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
