PART |
Description |
Maker |
MPS3391 MPS929 MPS930A MPS3390 MPS3396 MPS3397 MPS |
NPN silicon amplifier transistor. 45 V. (MPS929 / MPS930A) AMPLIFIER TRANSISTOR AMPLIFIER TRANSISTOR 放大器晶体管
|
Motorola, Inc Motorola Mobility Holdings, Inc.
|
2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier. Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp. Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
BC817-25-AE3-R BC817-40-AE3-R BC856-A-AE3-R BC817 |
NPN GENERAL PURPOSE AMPLIFIER npn型通用放大 NPN GENERAL PURPOSE AMPLIFIER 1500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS
|
UNISONIC TECHNOLOGIES CO LTD ??『绉???′唤?????? Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
|
2SC3583-R35 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
Renesas Electronics Corporation
|
UPA827 UPA827TF UPA827TF-T1 PA827TF |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体 HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
|
NEC Corp.
|
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
BFS481 Q62702-F1572 |
From old datasheet system NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA) NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
SIEMENS A G SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
MPS918 MPS918ZL1 |
Amplifier Transistor NPN Amplifier Transistors(NPN Silicon)
|
ON Semiconductor
|
FFB2227A FMB2227A FMB2227AL99Z FMB2227ANL |
NPN & PNP Complementary Dual Transistor 500 mA, 30 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR NPN & PNP General Purpose Amplifier
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
|
KTD1047 KTD1028V |
EPITAXIAL PLANAR NPN TRANSISTOR (INDUSTRIAL USE HIGH CURRENT) TRIPLE DIFFUSED NPN TRANSISTOR(HIGH POWER AMPLIFIER)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
2SC4695 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-236 晶体管|晶体管|叩| 20V的五(巴西)总裁| 500mA的一(c)|36 NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier,Muting Applications(低频通用放大器,噪声抑制应用的NPN硅外延平面型晶体 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting Applications
|
Hitachi,Ltd. Sanyo Electric Co.,Ltd.
|