PART |
Description |
Maker |
MTD1P50E |
TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM 1 A, 500 V, 15 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Motorola, Inc
|
VMO40-05P1 VMO60-05F VMO650-01F |
41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET ECOPAC-4 High dv/dt, Low-trr, HDMOS-TM Family 60 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AA 690 A, 100 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
HUF76407D3 HUF76407D3S HUF76407D3ST |
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFETPower MOSFET 11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
IXFH24N50 IXFH26N50 IXFT26N50 IXFM24N50 IXFH26N50S |
26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD 2MM TERMINAL STRIPS HiPerFET Power MOSFETs 24 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
IXYS[IXYS Corporation] IXYS, Corp.
|
1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V. High speed high conductance diode. Working inverse voltage 175 V. General purpose low diode. Working inverse voltage 100V. 500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). General purpose low diode. Working inverse voltage 200V. General Purpose Diodes
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] http://
|
PDTD113E PDTD113ET PDTD113EK PDTD113ES |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k-ohm, R2 = 1 k-ohm
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
POT3107Z-1-200 POT3107Z-1-100 POT3107Z-1-104 POT31 |
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 20 ohm RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 10 ohm RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 100000 ohm RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 200000 ohm RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 250000 ohm RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 500000 ohm RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 1000 ohm RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 200 ohm RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 2000 ohm RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 20000 ohm RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 25000 ohm RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 5000 ohm RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 500 ohm RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 50 ohm RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 50000 ohm
|
Murata Manufacturing Co., Ltd.
|
PPF440M |
N Channel MOSFET; Package: TO-254; ID (A): 5; RDS(on) (Ohms): 0.85; PD (W): 125; BVDSS (V): 500; Rq: 1; 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
IRFF210 FN1887 |
2.2A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET From old datasheet system 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
2SK769 |
10 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PANASONIC CORP
|
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