PART |
Description |
Maker |
IRFI744G IRFI744GPBF |
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=450V Rds(on)=0.63ohm Id=4.9A) HEXFET? Power MOSFET Power MOSFET(Vdss=450V, Rds(on)=0.63ohm, Id=4.9A) 功率MOSFET(减振钢板基本\u003d 450V,的Rds(on)\u003d 0.63ohm,身份证\u003d 4.9A
|
IRF[International Rectifier] International Rectifier, Corp.
|
STD2NC45-106 STQ1NC45R-AP STD2NC45-1 |
N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET N-channel 450V - 4.1ヘ - 1.5A - IPAK - TO-92 SuperMESH⑩ Power MOSFET
|
STMicroelectronics
|
IRFP443R IRFF430R IRF731R IRF732R IRFP442R IRFP342 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR Rugged Series Power MOSFETs - N-Channel TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.75A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.7A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.7A I(D) | TO-247AC TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.8A I(D) | TO-247 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 6.8AI(四)|47 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 5.4AI(四)|04AA TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 4A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.25A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 450V五(巴西)直| 2.25AI(四)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.35A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 1.35AI(四)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-204AA
|
International Rectifier, Corp. Intersil, Corp. Infineon Technologies AG Fairchild Semiconductor, Corp.
|
TSM1N45 TSM1N45CTA3 TSM1N45CTB0 |
450V N-Channel Power MOSFET
|
Taiwan Semiconductor Company, Ltd
|
2SK2432 2SK2619 2SK2636 2SK2403 2SJ454 2SK2404 2SK |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7A I(D) TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 5A I(D) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 16A I(D) 晶体管| MOSFET的| N沟道| 250V五(巴西)直| 16A条(丁) TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 6A I(D) | TO-262AA 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 6A条(丁)|62AA TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 20A I(D) 晶体管| MOSFET的| N沟道| 450V五(巴西)直| 20A条(丁) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Sanyo Electric Co., Ltd.
|
FQPF6N45 |
4 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET 450V N-Channel MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
|
SSN1N45B SSN1N45BTA SSN1N45BBU |
450V N-Channel B-FET 450V N-Channel MOSFET
|
Fairchild Semiconductor http://
|
DMP45H150DHE |
450V P-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
2SK1010-01 2SK1386-01 2SK1504-01S 2SK1510-01S 2SK1 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 450V五(巴西)直| 10A条(丁)|47VAR 晶体管| MOSFET的| N沟道| 450V五(巴西)直| 18A条(丁)|47VAR TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 7A I(D) | TO-220 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 6A I(D) | TO-262VAR TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-252VAR Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
|
Panasonic, Corp.
|
MTP6N60EWC MTP6P20EW MTP6P20EWC MTP3N100E16 MTP3N1 |
6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 6 A, 200 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 33 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc. MOTOROLA INC
|
JEE245B0 |
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 450V V(BR)DSS | 8A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 450V五(巴西)直| 8A条(丁)
|
Holtek Semiconductor, Inc.
|
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