| PART |
Description |
Maker |
| KMM53616000BK |
16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1
|
Samsung Semiconductor
|
| HYM64VX005GCL-60 HYM64VX005GCD-60 HYM64V2005GCD-60 |
2M X 64 EDO DRAM MODULE, 60 ns, ZMA144
4M X 64 EDO DRAM MODULE, 60 ns, ZMA144
144 pin SO-DIMM EDO-DRAM Modules 8MB , 16MB, 32MB & 64MB density
2M x 64 Bit EDO DRAM Module (SO-DIMM)...
4M x 64 Bit EDO DRAM Module (SO-DIMM)...
|
INFINEON TECHNOLOGIES AG
|
| M366S3323AT0 |
32MB x 64 SDRAM DIMM based on 16MB x 8, 4Banks, 4KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| TS8MED3260G |
From old datasheet system
32MB 72-PIN EDO SIMM With 16Mx8 3.3VOLT 32MB2针EDO公司上海药物研究所6Mx8 3.3VOLT
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 |
4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
|
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY57V161610ET-7I HY57V161610ET-10I HY57V161610ET-1 |
SDRAM - 16Mb
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| IS41C16100C |
16Mb DRAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|
| KMM5321200C2W |
1M x 32 DRAM SIMM
|
Samsung Semiconductor
|
| KMM5324000BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM5324004BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM5328004BSW |
8MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM5362003 KMM5362003G |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
