| PART |
Description |
Maker |
| MCR101G-X-XX-T92-K MCR101G-X-XX-T92-B MCR101-6-B-T |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
0.8 A, 400 V, SCR, TO-92
0.8 A, 600 V, SCR, TO-92
0.8 A, 200 V, SCR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| 350PEQ50W 350PEQ90W 350PEQ60W 350PEQ110W 350PEQ100 |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 1100V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 1000V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
|
International Rectifier
|
| N0676YS120-180 N0782YS120-160 N0992YS020-060 N0734 |
1346 A, 1800 V, SCR
1554 A, 1600 V, SCR
1995 A, 600 V, SCR
1465 A, 1600 V, SCR
1201 A, 2400 V, SCR
|
Westcode Semiconductors, Ltd.
|
| BDW21A |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA
Bipolar NPN Device in a Hermetically sealed TO3
|
Glenair, Inc.
Seme LAB
|
| MCR22-6-D MCR22-2RL1 |
Seinsitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
Sensitive Gate SCR
|
ON Semiconductor
|
| TGF148-600B TGF148-1200B TGF148-800B TGF148-1000B |
63 A, 600 V, SCR, TO-65
63 A, 1200 V, SCR, TO-65
63 A, 800 V, SCR, TO-65
63 A, 1000 V, SCR, TO-65
|
ST Microelectronics
|
| BD825-16 BD827-10 BD827-6 BD829-6 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1.5AI（丙）|02
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|202
|
Analog Devices, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| VSK170PBF |
SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A
|
Vishay Siliconix
|
| DG306AE25 |
Gate Turn-off Thyristor 353.25 A, 2500 V, GATE TURN-OFF SCR
|
Dynex Semiconductor, Ltd.
|
| R216CH12 R325CH02 R800CH04 |
1125 A, 1200 V, SCR
2398 A, 200 V, SCR
5260 A, 400 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| VSKT230-20 VSKT230-20PBF VSKT230-12PBF VSKT230-16 |
SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A
|
Vishay Siliconix
|
|
