| PART |
Description |
Maker |
| NPT1004 NPT1004-15 |
Gallium Nitride 28V, 45W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| AV45C-048L-033F20HA AV45C-048L-033F20HAN AV45C-048 |
1.5V, 1.8V, 3.3V, 5V Single Output 48V Input, 100W DC-DC Converter
|
Astec America, Inc
|
| DPP15-24 |
15-100W, 5-48V Output DIN Rail Mount Power Supplies
|
RSG Electronic Components GmbH
|
| V48SH1R840PRFH V48SH1R840PNFA V48SH1R840PNFH |
Delphi Series V48SH, 1/16th Brick 100W DC/DC Power Modules: 48V in, 1.8V, 40A out
|
Delta Electronics, Inc.
|
| STK433-100-E |
Thick-Film Hybrid IC 2-channel class AB audio power IC, 100W 100W
|
Sanyo Semicon Device
|
| WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| PSA08-11EWA |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
KINGBRIGHT[Kingbright Corporation]
|
| WP710A10ID5V |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| HHD25ZEB HHD25ZED HHD20YGE HHD20ZGB HHD20ZGE |
Coaxial Cable; Coaxial RG/U Type:402; Impedance:50ohm; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Color:Black; Leaded Process Compatible:Yes; Voltage Nom.:30V RoHS Compliant: Yes HHD25系列20/25A，半砖DC / DC转换器输入双输出4V/48V
HHD25 Series . 20/25A/ Half-Brick DC/DC Converter 24V/48V Input Dual Output
HHD25 Series . 20/25A, Half-Brick DC/DC Converter 24V/48V Input Dual Output HHD25系列20/25A，半砖DC / DC转换器输入双输出4V/48V
|
GE Security, Inc.
POWER-ONE[Power-One]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| RFP-375375N6Z50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
|
