| PART |
Description |
Maker |
| UMP1 DA226U |
0.025 A, 4 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
|
| HL9-100KWTQ HL9-101KWTQ HL9-102KWTQ HL9-1R0KWTQ HL |
1 ELEMENT, 56 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 820 uH, GENERAL PURPOSE INDUCTOR
HIGH CURRENT POWER CHOKES
1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 56000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 39 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 27 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1500 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 47 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5.6 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 270 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR
|
RCD COMPONENTS INC.
|
| GSOT05C-HT3-GS08 GSOT04C-HT3-GS08 GSOT12C-HT3-GS08 |
480 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
429 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
312 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
369 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
|
VISHAY SEMICONDUCTORS
|
| PPF75N10N |
N Channel MOSFET; Package: TO-258; ID (A): 50; RDS(on) (Ohms): 0.025; PD (W): 300; BVDSS (V): 100; Rq: 0.42; 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
|
Microsemi, Corp.
|
| U07-17 U07-24 U07-38 U07-19 PSC10-19 PSC10-D-11 PS |
1 ELEMENT, 175000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 600000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 240000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 120000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 430000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 50000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 72000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1500000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 36000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 6000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 17500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 360000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 86000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
|
|
| HUFA76429P3 HUFA76429S3S HUFA76429S3ST |
44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs
44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs 47 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| MA4X746 |
Silicon epitaxial planar type 0.2 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA3S781E |
Silicon epitaxial planar type (cathode common) 0.03 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| DNR-QDN004LF-B12-T13 DNR-QDN004LF-B24-BK DNR-QDN00 |
500 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE
500 W, UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE
|
INTERNATIONAL RESISTIVE CO INC
|
| DLZ-30AH1 DLZ-13C DLZ-13CA DLZ-17AH2 |
500 W, UNIDIRECTIONAL, 15 ELEMENT, SILICON, TVS DIODE
500 W, BIDIRECTIONAL, 15 ELEMENT, SILICON, TVS DIODE
|
GENERAL SEMICONDUCTOR INC
|
|
