| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| BLF8G20LS-140GV |
Power LDMOS transistor
|
NXP Semiconductors
|
| LX723-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| LQ801-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF25M612 BLF25M612G |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLA6G1011-200R |
Power LDMOS transistor
|
NXP Semiconductors
|
