Part Number Hot Search : 
HC1G14 FLK15LED B39202 CY4DSMD RT600 PJ1MPXX LBN7015 C339C
Product Description
Full Text Search

GT60J323H - Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT60J323H_7701606.PDF Datasheet


 Full text search : Insulated Gate Bipolar Transistor Silicon N Channel IGBT
 Product Description search : Insulated Gate Bipolar Transistor Silicon N Channel IGBT


 Related Part Number
PART Description Maker
IRG4PC40FPBF IRG4PC40FPBF-15 INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
International Rectifier
IRG4PH40K 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRF[International Rectifier]
IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15 55 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR
   INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
IRG4PH40U 41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
International Rectifier, Corp.
IRF[International Rectifier]
GT15M321 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
TOSHIBA[Toshiba Semiconductor]
MMG05N60D-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP11N60E-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGS13002DD MGS13002D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
MOTOROLA[Motorola, Inc]
MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
IGBT 0.5 A @ 25 600 V
From old datasheet system
ONSEMI[ON Semiconductor]
IRG4PSC71K-15 INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
2PG303 Insulated Gate Bipolar Transistor
Panasonic
MGP15N60U Insulated Gate Bipolar Transistor
MOTOROLA[Motorola, Inc]
 
 Related keyword From Full Text Search System
GT60J323H Rail GT60J323H eeprom GT60J323H Table GT60J323H module GT60J323H equivalent ic
GT60J323H planar GT60J323H Matsushita GT60J323H Test GT60J323H output data GT60J323H Mount
 

 

Price & Availability of GT60J323H

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
5.6208329200745