| PART |
Description |
Maker |
| TP2010L-1TA TP2010L-1TR1 TP2410L-1TA TP2410L-1TR1 |
180 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
180 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
|
Vishay Intertechnology, Inc.
|
| JANSR2N7272 FN4297 |
8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET
8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FSL13A0R4 FSL13A0D FSL13A0D1 FSL13A0D3 FSL13A0R FS |
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
9A/ 100V/ 0.180 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| TP0205A-T1-E3 |
180 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| IRFP240 |
20A, 200V, 0.180 Ohm, N-Channel Power MOSFET
|
Fairchild Semiconductor
|
| IRF240 |
18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFET
18A, 200V, 0.180 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| STH250N55F3-6 |
N-channel 55 V, 2.2 mOhm, 180 A, H2PAK, STripFET III Power MOSFET
|
ST Microelectronics
|
| MRF5P21180 |
2170 MHz, 180 W AVG., 2 x W?CDMA, 28 V Lateral N?Channel RF Power MOSFET
From old datasheet system
|
Motorola
|
| IRF6691TR1 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes.
|
International Rectifier
|
| AGR09180EF |
180 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
|
