PART |
Description |
Maker |
IFS100V12PT4 |
High Power RF LDMOS FETs
|
Infineon Technologies AG
|
IFS75B12N3T4B31 |
High Power RF LDMOS FETs
|
Infineon Technologies AG
|
PTFA092213EL-15 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
IDP08E65D2 |
High Power RF LDMOS FETs Qualified according to JEDEC for target applications
|
Infineon Technologies AG Infineon Technologies A...
|
PTF140451E PTF140451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz
|
Infineon Technologies AG
|
PTFA092201E PTFA092201F |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz
|
Infineon Technologies AG
|
PTFA212001E PTFA212001F |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
PTFA081501E PTFA081501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz
|
Infineon Technologies AG
|
PTFB211501F PTFB211501E |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
PTFA091201F PTFA091201E |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ?960 MHz
|
Infineon Technologies AG
|
PTFB182503FL PTFB182503EL |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz
|
Infineon Technologies AG
|
PTFA212401E PTFA212401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|