PART |
Description |
Maker |
HGTG20N60B3D FN3739 |
40A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode From old datasheet system
|
INTERSIL[Intersil Corporation]
|
HGTG20N60B3 |
40A, 600V, UFS Series N-Channel IGBTs
|
Intersil Corporation
|
HGTG20N60B3D G20N60B3 G20N60B3D |
40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 3.3V 36-mc CPLD
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
STGW40NC60WD GW40NC60WD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
STP35NF10 STB35NF10 STB35NF10T4 |
N-CHANNEL 100V 0.030 OHM 40A TO-220/D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET?/a> POWER MOSFET N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET POWER MOSFET N-CHANNEL 100V - 0.030OHM - 40A TO-220 / D2PAK LOW GATE CHARGE STRIPFET⒙ POWER MOSFET N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFETPOWER MOSFET N沟道100V 0.030ohm - 40A 220 / D2PAK封装,低栅极电荷STripFET⑩功率MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
|
FGH40N60SF FGH40N60SFTU |
80 A, 600 V, N-CHANNEL IGBT, TO-247AB 600V, 40A Field Stop IGBT
|
FAIRCHILD SEMICONDUCTOR CORP
|
STP40NF12 |
N-CHANNEL 120V - 0.028 OHM - 40A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET N-CHANNEL 120V - 0.028W - 40A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET N-CHANNEL 120V - 0.028W - 40A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET N-CHANNEL POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
BTA40-400A BTA40-700A BTA40-600A |
TRIAC ISOLIERTER INNENAUFBAU 40A 400V TRIAC ISOLIERTER INNENAUFBAU 40A 700V 可控硅ISOLIERTER INNENAUFBAU40A 700V TRIAC ISOLIERTER INNENAUFBAU 40A 600V 可控硅ISOLIERTER INNENAUFBAU40A 600V
|
STMicroelectronics N.V.
|
IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A) CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)\u003d 1.2ohm,身份证\u003d 6.2A
|
IRF[International Rectifier] International Rectifier, Corp.
|
FFD04H60S |
40A, 600V, Hyperfast II Diode
|
Fairchild Semiconductor
|
FQI12N60C FQB12N60C FQB12N60CTM |
600V N-Channel MOSFET 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
|
http:// FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
RJH60D6DPQ-E0 RJH60D6DPQ-E0-T2 |
600V - 40A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|