| PART |
Description |
Maker |
| SFH7221 SFH7221-Z |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
|
OSA Opto Light GmbH
OSRAM GmbH
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| CH-132 |
20 dB BiDirectional Coupler 11000 MHz 20分贝双向耦合1000兆赫
|
ZETTLER electronics GmbH
|
| MRF9180 MRF9180S |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs
880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| APM4305KC-TRG |
11000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA GREEN, SOP-8
|
Anpec Electronics, Corp.
|
| Q62703Q6175 Q62703Q1094 |
GaAlAs-IR-Lumineszenzdiode (880 nm)
|
OSRAM GmbH
|
| QED221.A4A0 |
5 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
QT OPTOELECTRONICS
|
| SFH4680 SFH4685 Q65110A1570 Q65110A1571 |
Engwinklige LED im MIDLED-Geh?use (880 nm)
|
OSRAM GmbH
|
| MHW913 |
14 WATT 880-915 MHz RF POWER AMPLIFIER
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| KP-1608SF4C |
NIFRAREDEMITTING DIODES 1.2 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Kingbright, Corp.
|
| XP1006-BD-00V |
8500 MHz - 11000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
MIMIX BROADBAND INC
|
| AWB7122P8 AWB7122P7 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module
|
Skyworks Solutions
|
