| PART |
Description |
Maker |
| L680 DGSK8-025A DGS3-025AS DGS4-025A |
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MA40414M |
GALLIUM ARSENIDE, KA BAND, MIXER DIODE
|
|
| AH214-F54 AH222-CHIP2 AH236-CHIP2 AH225-00 AH239-7 |
VHF-KA BAND, 1.4 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 0.5 pF, 15 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 2.8 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 2.2 pF, 15 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 6.9 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 9.42 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 5.72 pF, 15 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 2.2 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
|
| CVE7800-06-023-011 CVE7800-24-023-011 |
mm WAVE BAND, 25 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
|
SKYWORKS SOLUTIONS INC
|
| MGRB1018_D ON1882 MGRB1018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MGV125-21-P55 MGV075-15-P55 MGV100-24-P55 MGV075-1 |
KA BAND, 0.83 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.63 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.33 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.63 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.43 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.83 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.48 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.58 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE CERAMIC PACKAGE-2
|
NIC Components, Corp.
|
| WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| SBL-804 SBL SBL-121 SBL-122 SBL-221 SBL-801 SBL-80 |
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
C to Millimeter Band Mixer/ Detector/ Modulator Applications
C to Millimeter Band Mixer, Detector, Modulator Applications C至毫米波段混频器，检测器，调制器的应
|
http://
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| OH10015 |
Gallium Arsenide Devices
|
Panasonic
|
| 3SK0183 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01061B |
Gallium Arsenide Devices
|
Panasonic
|
| GN01068B |
Gallium Arsenide Devices
|
Panasonic
|
|
