| PART |
Description |
Maker |
| IR26-51C IR26-51C_L110_TR8 IR26-51C/L110/TR8 IR26- |
1 ELEMENT, INFRARED LED, 940 nm
1.6mm round Subminiature Side Looking Infrared LED
|
EVERLIGHT ELECTRONICS CO LTD
Everlight Electronics Co., Ltd
|
| SID1050CM SID1050M |
Infrared LED Lamp
5PHI ROUND INFRARED LED (DIRECT MOUNT)
|
Sanken electric
|
| APA3010F3C |
3.0x1.0 mm RIGHT ANGLE INFRARED EMITING DIODE 2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Kingbright, Corp.
Kingbright Corporation
|
| OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC
OPTEK Technologies
|
| SE1470 SE1470-003L |
1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm
AlGaAs Infrared Emitting Diode
|
Honeywell Accelerometers
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLP818 |
PHOTO-INTERRUPTER INFRARED LED PHOTOTRANSISTOR
TOSHIBA PHOTO INTERRUPTER INFRARED LED PHOTOTRANSISTOR
PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
| VSMF9700-GS18 VSMF9700-GS08 |
High Speed Infrared Emitting Diode, 890 nm
2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| SIR91-21C |
.9mm Round Subminiature “Z-BendLead Infrared LED 0.9毫米回合微型的“Z -弯”铅红外发光二极
.9mm Round Subminiature “Z-Bend” Lead Infrared LED
.9mm Round Subminiature “Z-Bend Lead Infrared LED
|
Everlight Electronic Co., Ltd.
Everlight Electronics Co., Ltd
|
