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IDP08E65D1 - High Power RF LDMOS FETs Temperature stable behaviour of key parameters

IDP08E65D1_7681594.PDF Datasheet


Part No.	IDP08E65D1
Description	High Power RF LDMOS FETs Temperature stable behaviour of key parameters
File Size	1,759.32K / 11 Page
Maker	Infineon Technologies AG Infineon Technologies A...
Homepage	http://www.infineon.com/
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Related Part Number

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PTFA212001E PTFA212001F	Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 ?2170 MHz	Infineon Technologies AG
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PTFB211501E PTFB211501F	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 鈥?2170 MHz	Infineon Technologies AG
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