| PART |
Description |
Maker |
| MMBT2222 |
Epitaxial planar die construction
|
MAKO SEMICONDUCTOR CO.,...
|
| UMC5N |
Epitaxial Planar Die Construction
|
TY Semiconductor Co., Ltd
|
| BZT52C30 BZT52C9V1 BZT52C5V1 |
1/2 Watt ZEBER DIODES Planar Die Construction
|
First Components International
First Components Intern...
|
| 2KBP10M |
Glass Passivated Die Construction
|
Mospec Semiconductor
|
| MBR830 MBR860 |
Guard Ring Die Construction for Transient Protection
|
Kersemi Electronic Co., Ltd.
|
| 1N5819-T 1N5817-B 1N5817-T 1N5818-B 1N5819-B 1N581 |
Through-Hole Schottky Rectifiers
Guard Ring Die Construction for Transient Protection
|
Diodes Incorporated
|
| TIP117F |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| TIP112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| ES2X-13-F ES2XA-13-F ES2B-13-F ES2AA |
2.0A SURFACE MOUNT SUPER-FAST RECTIFIER
RECTIFIER FAST-RECOVERY SINGLE 2A 100V 50A-ifsm 0.92V-vf 25ns 5uA-ir SMB 3K/REEL-13 2 A, 100 V, SILICON, RECTIFIER DIODE
Glass Passivated Die Construction
|
Diodes Incorporated
Diodes, Inc.
|
| TLE5009A16 |
Available as single die and dual die with separate supplies for each die
|
Infineon Technologies A...
|
| ICE65L04 |
Ultra Low-Power FPGA Known Good Die
|
SiliconBlue
|
| 1C5806 |
ULTRA FAST RECOVERY SILICON RECTIFIER DIE
|
SENSITRON[Sensitron]
|
