| PART |
Description |
Maker |
| NPT1010 NPT1010-15 |
Gallium Nitride 28V, 100W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| NPTB00050 NPTB00050-15 |
Gallium Nitride 28V, 50W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPA1003 NPA1003-15 |
Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier
|
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| NPT2010 |
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
| D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的，推挽式）（镀金多用的DMOS射频硅场效应管（50 28V 1GHz的，推挽式）
METAL GATE RF SILICON FET
|
3M Company
SEME-LAB[Seme LAB]
|
| TDA7490 |
25W + 25W STEREO CLASS-D AMPLIFIER 50W MONO IN BTL
|
STMICROELECTRONICS[STMicroelectronics]
|
| TDA7265 TDA7265G-J11-A-T TDA7265L-J11-A-T |
25W 25W STEREO AMPLIFIER WITH MUTE & STAND-BY
|
Unisonic Technologies
|
| D1023UK D1023 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-500MHz,单端) 金镀金属多功能硅的DMOS射频场效应管0 28V 175MHz时，单端）（镀金多用的DMOS射频硅场效应管（60 28V的，500MHz的单端式））
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
Microsemi, Corp.
|
| SC4524C |
28V 2A Step-Down Switching Regulator Wide input range: 3V to 28V
|
Semtech Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| TDA7264A TDA7264 1477 |
25 W, 2 CHANNEL, AUDIO AMPLIFIER, PZFM11
25 25W STEREO AMPLIFIER WITH MUTE/ST-BY 25 25瓦立体声功放音箱，静意法半导体，
25 25W STEREO AMPLIFIER WITH MUTE/ST-BY
From old datasheet system
|
ST Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
