PART |
Description |
Maker |
AHV2000 AHV2004 AHV2011 AHV2002 AHV2003 AHV20 |
SILICON HYPERABRUPT TUNING VARACTOR UHF BAND, 6.05 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 From old datasheet system
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Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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1N5441C 1N5450C 1N5442B 1N5443C 1N5456C 1N5454B 1N |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 Diode VAR Cap Single 30V 33pF 2-Pin DO-7 Diode VAR Cap Single 30V 8.2pF 2-Pin DO-7 Diode VAR Cap Single 30V 10pF 2-Pin DO-7 Diode VAR Cap Single 30V 100pF 2-Pin DO-7 Diode VAR Cap Single 30V 68pF 2-Pin DO-7 Diode VAR Cap Single 30V 22pF 2-Pin DO-7
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New Jersey Semiconductors
|
SMV1231-011 |
Hyperabrupt Tuning Varactors S BAND, 0.97 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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Skyworks Solutions, Inc.
|
1N5456A 1N5440 1N5454A 1N5451A 1N5452A 1N5453A |
Diode VAR Cap Single 30V 100pF 2-Pin DO-7 Diode VAR Cap Single 30V 4.7pF 2-Pin DO-7 Diode VAR Cap Single 30V 68pF 2-Pin DO-7 Diode VAR Cap Single 30V 39pF 2-Pin DO-7 Diode VAR Cap Single 30V 47pF 2-Pin DO-7 Diode VAR Cap Single 30V 56pF 2-Pin DO-7
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New Jersey Semiconductor
|
MA4ST550 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST |
L-KU BAND, 2.7 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE L-KU BAND, 0.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE High Q Hyperabrupt Tuning Varactors L-KU BAND, 1.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
MACOM[Tyco Electronics]
|
BBY58-03W Q62702-B912 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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AHV8401 AHV9302A AHV8603 |
MF-HF BAND, 81.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 HF-VHF BAND, 110 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 MF-HF BAND, 255 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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ADVANCED SEMICONDUCTOR INC
|
FMMV2101TA |
DIODE VAR CAPAC 30V 6.8PF SOT-23 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Zetex Semiconductor PLC
|
Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管(Hyperabrupt交界调谐二极管频率线性调谐范 12五) Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
DKV6522-24 |
SILICON HYPERABRUPT VARACTOR DIODE
|
ASI[Advanced Semiconductor]
|
BBY52-03W |
Silicon High Q Hyperabrupt Dual Tunin...
|
Infineon
|
SMV2020-000 SMV2021-000 SMV2022-000 SMV2023-000 SM |
Silicon Hyperabrupt Varactor Diode Chips
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ALPHA[Alpha Industries] Alpha Industries Inc
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