| PART |
Description |
Maker |
| AHV2000 AHV2004 AHV2011 AHV2002 AHV2003 AHV20 |
SILICON HYPERABRUPT TUNING VARACTOR UHF BAND, 6.05 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 1N5441C 1N5450C 1N5442B 1N5443C 1N5456C 1N5454B 1N |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7
Diode VAR Cap Single 30V 33pF 2-Pin DO-7
Diode VAR Cap Single 30V 8.2pF 2-Pin DO-7
Diode VAR Cap Single 30V 10pF 2-Pin DO-7
Diode VAR Cap Single 30V 100pF 2-Pin DO-7
Diode VAR Cap Single 30V 68pF 2-Pin DO-7
Diode VAR Cap Single 30V 22pF 2-Pin DO-7
|
New Jersey Semiconductors
|
| SMV1231-011 |
Hyperabrupt Tuning Varactors S BAND, 0.97 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Skyworks Solutions, Inc.
|
| 1N5456A 1N5440 1N5454A 1N5451A 1N5452A 1N5453A |
Diode VAR Cap Single 30V 100pF 2-Pin DO-7
Diode VAR Cap Single 30V 4.7pF 2-Pin DO-7
Diode VAR Cap Single 30V 68pF 2-Pin DO-7
Diode VAR Cap Single 30V 39pF 2-Pin DO-7
Diode VAR Cap Single 30V 47pF 2-Pin DO-7
Diode VAR Cap Single 30V 56pF 2-Pin DO-7
|
New Jersey Semiconductor
|
| MA4ST550 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST |
L-KU BAND, 2.7 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L-KU BAND, 0.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
High Q Hyperabrupt Tuning Varactors
L-KU BAND, 1.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
MACOM[Tyco Electronics]
|
| BBY58-03W Q62702-B912 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| AHV8401 AHV9302A AHV8603 |
MF-HF BAND, 81.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
HF-VHF BAND, 110 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MF-HF BAND, 255 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
ADVANCED SEMICONDUCTOR INC
|
| FMMV2101TA |
DIODE VAR CAPAC 30V 6.8PF SOT-23 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Zetex Semiconductor PLC
|
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| DKV6522-24 |
SILICON HYPERABRUPT VARACTOR DIODE
|
ASI[Advanced Semiconductor]
|
| BBY52-03W |
Silicon High Q Hyperabrupt Dual Tunin...
|
Infineon
|
| SMV2020-000 SMV2021-000 SMV2022-000 SMV2023-000 SM |
Silicon Hyperabrupt Varactor Diode Chips
|
ALPHA[Alpha Industries]
Alpha Industries Inc
|
