| PART |
Description |
Maker |
| 2SK3712 |
High voltage: VDSS = 250 V Gate voltage rating: -30 V Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
| 2SK3511 |
Super low on-state resistance: RDS(on) = 12.5 m MAX Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
| 2SK3481 |
Super low on-state resistance: RDS(on)1 = 50 m MAX. Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
| 2SK1954 |
Low on-resistance Low Ciss Ciss=300pF typ Built-in G-S Gate Protection Diode
|
TY Semiconductor Co., Ltd
|
| XP151A11B0MR |
Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V
|
TY Semiconductor Co., Ltd
|
| NTCWS024B-M2 |
Built-in ESD Protection Device
|
NICHIA CORPORATION
|
| NCSW119B-V1 |
Built-in ESD Protection Device
|
NICHIA CORPORATION
|
| NJCLS024Z-M3 |
Built-in ESD Protection Device
|
NICHIA CORPORATION
|
| NJCLS024Z-M7 |
Built-in ESD Protection Device
|
NICHIA CORPORATION
|
