PART |
Description |
Maker |
2SK1310A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
|
TOSHIBA
|
BLF225 |
VHF power MOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BLF242 |
HF/VHF power MOS transistor
|
New Jersey Semi-Conductor Products, Inc.
|
BLF147 |
VHF power MOS transistor
|
PHILIPS[Philips Semiconductors]
|
BLF245 |
VHF power MOS transistor
|
NXP Semiconductors Philips Semiconductors
|
BLF246B |
VHF push-pull power MOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER
|
TOSHIBA
|
RD06HVF1-101 RD06HVF1 |
MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
SPW17N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... Cool MOS⑩ Power Transistor Cool MOS??Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
|
INFINEON[Infineon Technologies AG]
|
2SK1310 |
N CHANNEL MOS TYPE (RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER)
|
Toshiba Semiconductor
|
MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
|