| PART |
Description |
Maker |
| N25Q128A11ESE40G |
Micron Serial NOR Flash Memory
|
Micron Technology
|
| N25Q512A13GF840E N25Q512A83GSF40G |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A
|
Micron Technology
|
| N25Q128A13ESE40G |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A
|
Micron Technology
|
| N25Q032A11EF640F |
Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase
Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| M29F800FB55N3E2 |
Micron Parallel NOR Flash Embedded Memory
|
Micron Technology
|
| M25P80-VMF6P M25P80-VMP6 M25P80-VMP6T M25P80-VMW6T |
8 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
|
http://
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| M45PE10 M45PE10-VMP6 M45PE10-VMP6TG M45PE10-VMP6TP |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
STMicroelectronics N.V.
意法半导
|
| M25P20-VMN6T M25P20-VMW6T |
2 Mbit/ Low Voltage/ Serial Flash Memory With 25 MHz SPI Bus Interface
4 Mbit Uniform Sector, Serial Flash Memory
|
STMicroelectronics
意法半导
|
| M25PE80-VMP6T M25PE80-VMW6P M25PE80-VMP6P M25PE80- |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
COIL CHOKE 27MH .50A RADIAL 8兆位，低电压，页面与字节可擦除串行闪存更改性，50MHz的SPI总线，标准品
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out
|
STMicroelectronics N.V.
ST Microelectronics
|
| W25P10-VNI W25P10-VSNI W25P10-VNIG W25P20-VNI W25P |
1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 40MHZ SPI
4 Mbit Uniform Sector, Serial Flash Memory
|
Winbond Electronics Corp
|
