| PART |
Description |
Maker |
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| SFS9624 |
2.4 A, 250 V, 2.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
|
| SIHFR9214T-E3 |
2.7 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
|
VISHAY SILICONIX
|
| RFP6N50 RFM6N45 RFP6N45 |
6A/ 450V and 500V/ 1.250 Ohm/ N-Channel Power MOSFETs
6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| 3404.2411.22 3404.2422.11 |
Surface Mount Fuse with Clip, 4.2 x 11.1 mm, Time-Lag T, UMZ 250 = UMT 250 (Au) UMC 250
|
Schurter Inc.
|
| HVP1007057FB HVP1007057GB HVP1007057JB HVP1007057K |
Ultra High Voltage Resistors Up to 5 Gig ohm, 250 Watt and 300 KV DC
|
American Accurate Components, Inc.
|
| BSZ42DN25NS3G |
5 A, 250 V, 0.425 ohm, N-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC, TSDSON-8
|
Infineon Technologies AG
|
| CR0201FW11R8GLF |
RESISTOR, 0.05 W, 1 %, 250 ppm, 11.8 ohm, SURFACE MOUNT, 0201 CHIP, ROHS COMPLIANT
|
Bourns, Inc.
|
| IRFP4332PBF |
57 A, 250 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
Advanced Process Technology
|
International Rectifier
|
| CR0805G17M4F CR0805G17M4G CR0805G17M4J CR0805G17M8 |
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 1 %, 250 ppm, 17400000 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 2 %, 250 ppm, 17400000 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 5 %, 250 ppm, 17400000 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 1 %, 250 ppm, 17800000 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 2 %, 250 ppm, 17800000 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 5 %, 250 ppm, 17800000 ohm, SURFACE MOUNT, 0805 CHIP
|
Welwyn Components, Ltd.
|
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| LPM2M120-030 LPM2M250-006 |
120 A, 300 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
250 A, 60 V, 0.004 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
SENSITRON SEMICONDUCTOR
|
|
