| PART |
Description |
Maker |
| HM628511HC HM628511HCJP-10 HM628511HCLJP-10 |
4M High Speed SRAM (512-kword x 8-bit)
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 35V; Case Size: 16x35.5 mm; Packaging: Bulk 4分高速SRAM12 - KWord的8位）
4M High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位）
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| HM628511CJPI12 HM628511HCJPI-12 HM628511HCI |
Memory>Fast SRAM>Asynchronous SRAM
Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit)
Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
RENESAS[Renesas Electronics Corporation]
|
| HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (512-kword x 8-bit)
BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| HM62W16255H HM62W16255HJP-12 HM62W16255HJP-15 HM62 |
4M High Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWord的x 16位）
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HM62W16255H |
4M High Speed SRAM (256-kword ?16-bit)(4M楂?????RAM(256k瀛??16浣?)
|
Hitachi,Ltd.
|
| M21L216128A M21L216128A-10J M21L216128A-10T M21L21 |
128 K x 16 SRAM HIGH SPEED CMOS SRAM
|
List of Unclassifed Manufacturers
ETC
|
| IDT70V658S15DR IDT70V657S10DRI IDT70V657S15DRI IDT |
Dual N-Channel Digital FET
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 高.3 128/64/32K × 36 ASYNCHRONO美国双端口静态RAM
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 32K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 32K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
|
Integrated Device Technology, Inc.
|
| R1LP0408CSP-7LC R1LP0408C-C R1LP0408CSB-5SC R1LP04 |
4M SRAM (512-kword ??8-bit)
4M SRAM (512-kword 8-bit)
4M SRAM (512-kword × 8-bit)
4M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| LPC3220FET296 |
ARM926EJ-S with 128 kB SRAM, USB High-speed OTG, SD-MMC, NAND flash controller
|
NXP Semiconductors N.V.
|
| HM64YLB36514BP-6H HM64YLB36514 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode)
16M Synchronous Late Write Fast Static RAM (512-kword 】 36-bit, Register-Latch Mode)
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas Electronics Corporation
|
