| PART |
Description |
Maker |
| SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
|
Winchester Electronics Corporation
|
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| APT4012BVFR APT4012SVFR APT4012BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 37; RDS(on) (Ohms): 0.12; BVDSS (V): 400; 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V FREDFET
|
Microsemi, Corp.
Advanced Power Technology
|
| NPC50-100G-50R0G NPC50-50G-50R0F NPC50-50G-50R0J N |
0 MHz - 4000 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 12400 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 12400 MHz 100 ohm RF/MICROWAVE TERMINATION
0 MHz - 400 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 400 MHz 100 ohm RF/MICROWAVE TERMINATION
0 MHz - 2500 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Marktech Optoelectronics
Ecliptek, Corp.
Daishinku, Corp.
Electronic Theatre Controls, Inc.
飞思卡尔半导体(中国)有限公司
Pulse Engineering, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| SPH-20.13OHM5 SPH-20.11OHM5 SPH-20.16OHM5 SPH-20.1 |
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.13 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.11 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.16 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.15 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 47 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.051 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.091 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 1300 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 3.3 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.33 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.36 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.39 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 56 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 82 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 1.1 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 4.3 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.3 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 68 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 1.3 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.43 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 2.4 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
IRC Advanced Film
|
| FRM244D FN3230 FRM244R FRM244H |
12A/ 250V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs
12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RK73B1JLTPD3R9G RK73B2ALTPD3R9G |
RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 2 %, 400 ppm, 3.9 ohm, SURFACE MOUNT, 0603 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 2 %, 400 ppm, 3.9 ohm, SURFACE MOUNT, 0805 CHIP
|
KOA Speer Electronics,Inc.
|
| IRF730 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY INTERTECHNOLOGY INC
|
| IRFR320BTM IRFR320BTF |
3.1 A, 400 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 2N6800TXV |
3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
HARRIS SEMICONDUCTOR
|
| IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
HARRIS SEMICONDUCTOR
Intersil Corporation
|
|
