PART |
Description |
Maker |
STB60NH02L04 STB60NH02LT4 STB70NFS03L06 STB70NFS03 |
N-Channel 24V - 0.0062ohm - 60A - D2PAK STripFET TM III Power MOSFET N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET 10 OHM, Quad, SPST, CMOS Analog Switches RADIATION HARD 4096 x 1 BIT STATIC RAM 4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 5.0 V PC real-time clock N-channel 60V - 0.0075ohm - 70A - D2PAK STripFET TM III Power MOSFET for DC-DC conversion N-channel - 30V - 0.0075ohm - 70A D2PAK STripFET TM Power MOSFET plus schottky rectifier N-channel 30V - 0.005ohm - 85A - D2PAK STripFET TM Power MOSFET N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics] MAXIM ZARLINK
|
30KPA54A 30KPA84A 30KPA84C 30KPA132CA 30KPA43 30KP |
Diode TVS Single Uni-Dir 54V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 84V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 84V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 43V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 30V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 320V 30KW 2-Pin Diode TVS Single Uni-Dir 400V 30KW 2-Pin Case P-600 Diode TVS Single Bi-Dir 30V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 42V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 51V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 51V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 58V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 72V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 198V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 72V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 71V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 66V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 66V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 108V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 108V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 102V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 102V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 78V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 78V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 198V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 64V 30KW 2-Pin Case P600 T/R
|
New Jersey Semiconductor
|
R15KP20 R15KP200A R15KP200C R15KP100 R15KP100A R15 |
TRANSIENT VOLTAGE SUPPRESSORS Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R Diode TVS Single Uni-Dir 90V 15KW 2-Pin Case 5R Diode TVS Single Bi-Dir 40V 15KW 2-Pin Case 5R Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case 5R Diode TVS Single Uni-Dir 36V 15KW 2-Pin Case 5R Diode TVS Single Uni-Dir 51V 15KW 2-Pin Case 5R Diode TVS Single Uni-Dir 70V 15KW 2-Pin Case 5R Diode TVS Single Uni-Dir 58V 15KW 2-Pin Case 5R Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case 5R
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P... New Jersey Semi-Conduct... New Jersey Semiconductors
|
LB66B1 LB66B1-67B LB66B1-67CB LB66B1-67U LB66B1-76 |
METAL CASE, CASE-MOUNTED SEMICONDUCTORS
|
http:// CTS Corporation
|
LA363B5 LA363B5B LA363B5CB LA363B5U |
METAL CASE, CASE-MOUNTED SEMICONDUCTORS
|
CTS Corporation
|
LAIC66A1U LAD66A1U LA000A1U |
METAL CASE, CASE-MOUNTED SEMICONDUCTORS
|
CTS Corporation
|
LA-A2 LA000A2B LA000A2CB LA000A2U LAD66A2B LAD66A2 |
METAL CASE, CASE-MOUNTED SEMICONDUCTORS
|
CTS Corporation ETC
|
STP22NM50 STP22NM50FP STB22NM50 STB22NM50-1 |
N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh⑩Power MOSFET N沟道500V - 0.16ohm - 20A条TO-220/FP/D2PAK/I2PAK的MDmesh⑩功率MOSFET
|
STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
|
E526HN-100304 E526HN-100315 E526HNA-100314 E526HN- |
COIL .13UH TYPE MC120 W/O CASE UNSHIELDED, VARIABLE INDUCTOR COIL .0437UH TYPE MC120 W/O CASE UNSHIELDED, VARIABLE INDUCTOR COIL .137UH TYPE MC120 W/CASE SHIELDED, VARIABLE INDUCTOR COIL .118UH TYPE MC120 W/O CASE UNSHIELDED, VARIABLE INDUCTOR COIL .29UH TYPE MC120 W/CASE SHIELDED, VARIABLE INDUCTOR COIL .211UH TYPE MC120 W/O CASE UNSHIELDED, VARIABLE INDUCTOR COIL .0461UH TYPE MC120 W/O CASE UNSHIELDED, VARIABLE INDUCTOR COIL .141UH MC120 W/CASE SHIELDED, VARIABLE INDUCTOR
|
TOKO, Inc.
|
STB185N55F3 STP185N55F3 |
120 A, 55 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET N-channel 55V - 3.2m楼? - 120A - D2PAK/TO-220 STripFET垄芒 Power MOSFET N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET?/a> Power MOSFET N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET Power MOSFET N-channel 55V - 3.2mヘ - 120A - D2PAK/TO-220 STripFET⑩ Power MOSFET
|
STMicroelectronics
|
NTP27N06 NTB27N06 NTB27N06T4 |
Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK LASER MOD 670NM .95MW MVP ROUND LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
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