PART |
Description |
Maker |
2N404 |
JUNCTION TRANSISTOR Germanium p-n-p Alloy Type
|
New Jersey Semi-Conductor Products, Inc.
|
BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
2SB337 2SB471 2SB472 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT
|
Unknow
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
1N128 |
Germanium Diodes / Germanium Rectifiers
|
ETC
|
BFP740FE6327 BFP740F07 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG Infineon Technologies A...
|
BF776 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell California Eastern Labs
|
BFU730F |
wideband silicon germanium RF transistor
|
NXP Semiconductors
|