| PART |
Description |
Maker |
| KDR411 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW PWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| 5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 5082-2277 |
SCHOTTKY BARRIER DUAL DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S-C BAND, MIXER DIODE
|
ASI
Advanced Semiconductor, Inc.
|
| CBS05F30 CBS05F30-14 |
Schottky Barrier Diode Silicon Epitaxial
Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
| 5082-2351 50822351 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
|
| NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
| RB521ZS-301 |
Schottky Barrier Diode
0.1 A, 30 V, SILICON, SIGNAL DIODE ULTRA SMALL, GMD2, 2 PIN
Schottky Barrier Diode
|
Rohm
Incon, Inc.
|
| SB01-15NP SB01-15NP-E |
150V, 100mA Rectifier Shottky Barrier Diode
Schottky Barrier Diode
DIODE SCHOTTKY 150V 0.1A 3NP
|
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
|
| BAT54SDW BAT54CDW BAT54ADW BAT54BRW-TP BAT54SDW-TP |
200mWatt, 30Volt Schottky Barrier Diode
DIODE SCHOTTKY 200MW 30V SOT363 0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| HSB88WA |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
