| PART |
Description |
Maker |
| NX8369TS |
LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX7663JB-BC-AZ NX7663JB-BC |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
CEL[California Eastern Labs]
|
| NX7335AN-AA NX7335BN-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NDL7564P NDL7103 NDL7113 NDL7153 NDL7163 NDL7502P |
Low Power 5V RS232 Dual Driver/Receiver with 0.1?碌F Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?掳C to 85?掳C
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION InGaAsP的应变量子阱的DC -异质结脉冲激光二极管模块1310 OTDR的应
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| ML9SM41 |
InGaAsP DFB-LASER DIODE WITH EA MODULATOR
|
Mitsubishi Electric Semicon...
|
| NX5521 NX5521EH |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX5504_06 NX5504 NX5504EH-AZ NX5504EK-AZ NX550406 |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| ML792E32 |
(ML7xx32) 10Gbps InGaAsP DFB LASER DIODE
|
Mitsubishi Electric
|
