PART |
Description |
Maker |
MBM29FS12DH15PBT |
BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT
|
SPANSION LLC
|
MX25U12835FZNI08G MX25U12835FZ2I10G MX25U12835FZNI |
1.8V 128M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
MX25L12835FMI10G MX25L12835FM2I10G MX25L12835FZ2I1 |
3V 128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
UPD45128841G5-A80T-9JF UPD45128841G5-A80LT-9JF PD4 |
SDRAM|4X4MX8|CMOS|TSOP|54PIN|PLASTIC 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) SDRAM|4X8MX4|CMOS|TSOP|54PIN|PLASTIC 128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc.
|
MX25L12835E MX25L12835EMI-10G MX25L12835EZNI-10G |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY HIGH PERFORMANCE SERIAL FLASH SPECIFICATION
|
Macronix International
|
UPD23C128000BLGY-XXX-MJH UPD23C128000BLGX-XXX UPD2 |
128M-bit (16M-wordx8-bit/8M-wordx16-bit) Mask ROM
|
NEC
|
K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
HM5212325F HM5212325F-B60 HM5212325FBP-B60 |
128M LVTTL interface SDRAM 100MHz, 1-Mword x 32-bit x 4-bank 128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM INFRARED LIGHT EMITTING DIODE LED ORANGE J-TYPE SMD TAPE/REEL 128M的LVTTL接口SDRAM00兆赫1 - Mword × 32位4个银行PC/100 SDRAM
|
HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
|
IS24C02 IS24C08 IS24C04 IS24C01 24C16 IS24C16-3PI |
16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM From old datasheet system 301K 1% 100PPM TF 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 RES 2.7 OHM 5% 0.1 W METAL FILM SMT 0805 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 2K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 RESISTOR,309,CR0805 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2线串行EEPROM中的CMOS
|
Integrated Silicon Solu... Integrated Silicon Solution Inc ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution, Inc. Integrated Silicon Solution...
|
UPD45128163G5-A75-9JF UPD45128841G5-A10B-9JF UPD45 |
128M-bit Synchronous DRAM 4-bank/ LVTTL OSCILLATORS 100PPM -20 70 3.3V 4 18.432MHZ PD HCMOS 5X7MM 4PAD SMD 128兆位同步DRAM 4银行,LVTTL 128M-bit Synchronous DRAM 4-bank, LVTTL 128兆位同步DRAM 4银行,LVTTL
|
NEC Corp. NEC, Corp.
|
MX23L12822 23L12822 |
128M-BIT MASK ROM (16/32 BIT OUTPUT) From old datasheet system
|
Macronix 旺宏
|