| PART |
Description |
Maker |
| MIMMG200DR060UZA |
600V 200A IGBT Module RoHS Compliant
|
Micross Components
|
| PCHMB200A6 |
IGBT MODULE Chopper 200A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| 7MBP200VEA060-50 |
IGBT MODULE (V series) 600V / 200A / IPM
|
Fuji Electric
|
| QIC0620001 |
Dual Common Emitter IGBT Module 200A 600V Per Switch
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
|
| MIMMG200DR120B |
1200V 200A IGBT Module RoHS Compliant
|
Micross Components
|
| MIMMG200DR120UK |
1200V 200A IGBT Module RoHS Compliant
|
Micross Components
|
| IRKHF200-02GP IRKKF200-06HP IRKHF200-06GP IRKHF200 |
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CC|600V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CC|400V V(RRM)|200A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|200V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CC|800V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CA|400V V(RRM)|200A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|600V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|200V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增| 200伏五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 400V五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 400V五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|200V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 200伏五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR|DUAL|CA|400V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 400V五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 800V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|CC|1.2KV V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 1.2KV五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.2KV五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR|DUAL|CC|600V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|消委会| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|CC|1KV V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 1KV交五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1KV交五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|CC|200V V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 200伏五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 800V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|200A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1KV V(RRM)|200A I(T)
THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CA|1KV V(RRM)|200A I(T)
|
Microchip Technology, Inc.
STMicroelectronics N.V.
IXYS, Corp.
Glenair, Inc.
L-com, Inc.
Powerex, Inc.
|
| MIMMG150DR060UZA |
600V 150A IGBT Module RoHS Compliant
|
Micross Components
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS
EMI/RFI FILTER
IGBT MODULE, TRENCH, 600V, 6 PACK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600V; Current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; Current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes
IGBT MODULE, 6 PACK 600VIGBT MODULE, 6 PACK 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24A; Current, Icm pulsed:22A; Power, Pd:1700W; Time, rise:30ns;
EPROM CMOS Programmable Logic Device
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
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