| PART |
Description |
Maker |
| SPN02N60C3 SPN02N60C305 |
New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances
|
Infineon Technologies AG
|
| AM3446N |
Low rDS(on) trench technology
|
TY Semiconductor Co., L...
|
| AM2302N |
Low rDS(on) trench technology
|
TY Semiconductor Co., Ltd
|
| AM3444N |
Low rDS(on) trench technology
|
TY Semiconductor Co., L...
|
| AUIRGPS4070D0 |
Low VCE (on) Trench IGBT Technology
|
Infineon Technologies A...
|
| FDG6316P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| FDC608PZ |
High performance trench technology for extremely low RDS
|
TY Semiconductor Co., Ltd
|
| FDN327N |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| KSM9Z34 |
Advanced high cell denity trench technology for ultra RDS(ON)
|
Kersemi Electronic Co.,...
|
| IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
| IRF1404 |
Advanced Process Technology Ultra Low On-Resistance
|
Kersemi Electronic Co., Ltd...
|
