| PART |
Description |
Maker |
| USB-COM232-PLUS-2 USB-COM232-PLUS2 |
Future Technology Devices International Ltd
|
List of Unclassifed Manufacturers
|
| FT230XQ-R FT230XS-XXXX FT230XQ-XXXX FT230XS-R |
Future Technology Devices International Ltd.
|
Future Technology Devic...
|
| FT2232D |
Future Technology Devices International Ltd
|
List of Unclassifed Manufacturers
|
| FT245RQ-REEL FT245RL-REEL |
Future Technology Devices International Ltd. FT245R USB FIFO IC
|
List of Unclassifed Man...
Future Technology Devic...
|
| DC3217BY |
The Shape that Fits the Future
|
Intel Corporation
|
| 2FB-XX-F-353 |
FUTURE BUS CONNECTOR
|
Adam Technologies, Inc.
|
| TGUI9440-2 TGUI9440-R |
GUI Accelerator
TGUI9440-2 With Future ISA Bus Support
|
Trident
List of Unclassifed Manufacturers
|
| RKEF090 RKEF300 RKEF250 BBRF550 BBRF5501 RKEF500 R |
PolySwitch Resettable Devices Radial-leaded Devices
Overcurrent Protection Device
|
Tyco Electronics
http://
|
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
