| PART |
Description |
Maker |
| 2SC4413 |
Adoption of FBET process. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SC4695 |
Adoption of FBET process. Small ON resistance [Ron=1W (IB=5mA)].
|
TY Semiconductor Co., Ltd
|
| 2SC4104 |
High fT. Small reverse transfer capacitance. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| 2SB1121 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., L...
|
| 2SC5069 |
High current capacity. Adoption of MBIT process. High DC current gain.
|
TY Semiconductor Co., Ltd
|
| VPH01 |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For Extended-Definition TV Projections
|
SANYO[Sanyo Semicon Device]
|
| MB85R256G |
256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies
|
http://
|
| IRF7805QPBF08 |
Advanced Process TechnologyUltra Low On-Resistance
|
International Rectifier
|
| SPJB15 |
Low Profile Process Sealed Tactiles
|
Nihon Kaiheiki Industry Co. Ltd.
|
| IRF9204PBF |
Advanced Process Technology, Ultra Low On-Resistance
|
International Rectifier
|
| IRFR5505TRPBF IRFR5505PBF IRFR5505PBF-15 |
Advanced process Technolgy
ULTRA LOW ON RESISTANCE
|
International Rectifier
|
| IRFR3411PBF |
Advanced Process Technology Ultra Low On-Resistance
|
Kersemi Electronic Co., Ltd...
|
