| PART |
Description |
Maker |
| NEXCW NEXCW104Z55V107X55TRF NEXCW473Z55V107X55TRF |
V-Chip Memory Back-Up Capacitors
|
NIC-Components Corp.
|
| NEXG474Z55V145X18F NEXG103Z55V11X55F NEXG104Z55V11 |
Memory Back-Up Capacitors
|
NIC-Components Corp.
|
| M62021 M62021FP M62021L M62021P |
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| ET9000 |
486 WRITE BACK CACHE AT SINGLE CHIP
|
ETC[ETC]
|
| ET-9000 |
486 Write Back Cache AT Single Chip
|
ETEQ Microsystems
|
| XRAG208 |
432-bit UHF, EPCglobal Class1 Generation2 and ISO 18000-6C, contactless memory chip with user memory
|
STMicroelectronics
|
| K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| BZB100A |
Dual back-to-back Zener diode
|
NXP Semiconductors
|
| LC87F72C8A |
8-BIT SINGLE CHIP MICROCONTROLLER WITH 128 KB FLASH MEMORY AND 2048-BYTE RAM ON CHIP
CMOS IC
|
Sanyo Semicon Device
|
| S71GL032A40BFI0B2 S71GL064A80BAI0B3 S71GL064A80BAI |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM SPECIALTY MEMORY CIRCUIT, PBGA56
DIODE ZENER 200MW 5.1V 1005 SPECIALTY MEMORY CIRCUIT, PBGA56
DIODE ZENER 200MW 9.1V 1005 SPECIALTY MEMORY CIRCUIT, PBGA56
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 堆叠式多芯片产品（MCP）的闪存和RAM
DIODE ZENER 200MW 4.7V 1005
INDUCTOR POWER 3.3UH 5.4A SMD
INDUCTOR,TOROID,HORIZONTAL, 22.0 uH,7.0 IDC,0.015 OHM,
|
Spansion, Inc.
Spansion Inc.
|
