| PART |
Description |
Maker |
| GS8170LW36C-250 GS8170LW72C-200 GS8170LW72C-300 GS |
Low-Noise Operational Amplifier 8-SOIC -40 to 85
18Mb sigma 1x1Lp CMOS I/O Late Write SigmaRAM
Low-Noise Operational Amplifier 8-PDIP -40 to 85 35.7西格x1Lp的CMOS的I / O后写入SigmaRAM
Low-Noise Operational Amplifier 8-SO -40 to 85 35.7西格x1Lp的CMOS的I / O后写入SigmaRAM
|
Electronic Theatre Controls, Inc.
|
| M5238AFP M5238AL M5238AP M5238P M5238FP |
DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS 双路低噪声J - FET输入运算放大
DUAL LOW NOISE JFET INPUT OPERATIONAL AMPLIFIERS
CRYSTAL 30.000 MHZ 10PF SMD 双低噪声JFET输入运算放大
Dual Low Noise J-Fet Input Operational Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| HA4-5112883 HA-5104 |
Dual and Quad/ 8MHz and 60MHz/ Low Noise Operational Amplifiers
Dual/ Low Noise/ High Performance Uncompensated Operational Amplifier
|
Intersil Corporation
|
| OP-27EP OP-27GZ OP-27 OP-27AJ OP-27AZ OP-27BJ OP-2 |
LOW NOISE, PRECISION OPERATIONAL AMPLIFIER 低噪声，高精度运算放大器
Low Noise, Precision Operational Amplifier; Package: LCC:CER LEADLESS CHIP CARR; No of Pins: 20; Temperature Range: Military OP-AMP, 200 uV OFFSET-MAX, 8 MHz BAND WIDTH, PQCC20
Low Noise, Precision Operational Amplifier; Package: ROUND HEADER/METAL CAN; No of Pins: 8; Temperature Range: Military OP-AMP, 60 uV OFFSET-MAX, 8 MHz BAND WIDTH, MBCY8
4" CONN,COMP.,EMT,DC 低噪声，高精度运算放大器
LOW NOISE PRECISION OPERATIONAL AMPLIFIER
|
Analog Devices, Inc.
Linear Technology, Corp.
AD[Analog Devices]
|
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| OP-270A OP-270AJ8 OP-270E OP-270EJ8 OP-270G OP-270 |
From old datasheet system
Dual/Quad Low Noise / Precision Operational Amplifiers
Dual/Quad Low Noise, Precision Operational Amplifiers DUAL OP-AMP, 75 uV OFFSET-MAX, 6 MHz BAND WIDTH, CDIP8
Dual/Quad Low Noise, Precision Operational Amplifiers QUAD OP-AMP, 400 uV OFFSET-MAX, 6 MHz BAND WIDTH, CDIP14
Dual/Quad Low Noise, Precision Operational Amplifiers DUAL OP-AMP, 250 uV OFFSET-MAX, 6 MHz BAND WIDTH, PDIP8
Dual/Quad Low Noise, Precision Operational Amplifiers QUAD OP-AMP, 1000 uV OFFSET-MAX, 6 MHz BAND WIDTH, PDIP14
Dual/Quad Low Noise, Precision Operational Amplifiers QUAD OP-AMP, 1000 uV OFFSET-MAX, 6 MHz BAND WIDTH, PDSO16
Dual/Quad Low Noise, Precision Operational Amplifiers 四低噪声，高精度运算放大
|
LINER[Linear Technology]
Linear Technology Corporation
Linear Technology, Corp.
|
| IDT70914S25PI IDT70914S25PB IDT70914S25P 70914_DS_ |
Low-Noise JFET-Input Operational Amplifier 14-PDIP 0 to 70 高6KK的9）同步双端口RAM
High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CFP -55 to 125 4K X 9 DUAL-PORT SRAM, 25 ns, PQCC68
High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CDIP -55 to 125 4K X 9 MULTI-PORT SRAM, 25 ns, PQCC68
High Speed Low-Noise JFET-Input Quad Operational Amplifier 20-LCCC -55 to 125
HIGH SPEED 36K (4K X 9) SYNCHRONOUS DUAL-PORT RAM
From old datasheet system
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| BA15532 BA15532F BA15532N BA15532/F/N |
Standard Linear LSIs > Operational amplifier > Operational amplifier
Dual high slew rate, low noise operational amplifier
Dual high slew rate/ low noise operational amplifier
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| HA7-5127-2 HA7-5127-5 HA7-5127A-5 HA9P5127-5 HA-51 |
From old datasheet system
8.5MHz, Ultra-Low Noise Precision Operational Amplifier Features
8.5MHz Ultra-Low Noise Precision Operational Amplifier
8.5MHz/ Ultra-Low Noise Precision Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
| HA-5222883 HA7-5222883 HA-5222_883 FN3717 HA7-5222 |
Dual, Low Noise, Wideband, Precision Operational Amplifier
Dual Low Noise Wideband Precision Operational Amplifier
From old datasheet system
Dual/ Low Noise/ Wideband/ Precision Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
| HA1-5104883 HA-5104_883 HA4-5104883 HA-5104883 FN3 |
From old datasheet system
Low Noise/ High Performance/ Quad Operational Amplifier
Low Noise, High Performance, Quad Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
