| PART |
Description |
Maker |
| KSK117 |
Tools, Drill Bits
N-CHANNEL JUNCTION FET (LOW FREQUENCY LOW NOISE AMP.)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| 5075 5056 5052 5058 |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
＂DRILL GAUGE 1/16-1/2＂＂
WIRE GAUGE US STANDARD
DRILL GAUGE 1-5.9MM 钻针 - 5.9毫米
|
Keystone Electronics, Corp.
|
| IDT72T51333 IDT72T51353 IDT72T51343 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
Integrated Device Technology, Inc.
|
| TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
| EDD2516AKTA-E |
256M bits DDR SDRAM (16M words x16 bits DDR400)
|
Elpida Memory
|
| IS42S16400D-7BL IS42S16400D-7BLI IS42S16400D-7T IS |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS42S16400D-6T IS42S16400D-6TL IS42S16400D-7TI IS4 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
| IS45S16400F |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution
|
| 42S32200 IS42S32200-7T IS42S32200-7TI IS42S32200-6 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution Inc
|
| TC58FVB160FT-85 TC58FVT160FT-85 TC58FVB160FT-12 TC |
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
TOSHIBA
|
