PART |
Description |
Maker |
C3216X5R1C106M160AA |
Application Main Feature
|
TDK Electronics
|
U4090B-PFNY |
Monolithic Integrated Feature Phone Circuit EMI Improved IC MONO FEATURE PHONE EMI 44SSOP TELEPHONE MULTIFUNCTION CKT, PDSO44
|
http:// ATM Electronic, Corp.
|
K2502Y K1200Y K2200Y K2202Y K1500Y K0900Y K1300Y K |
SIDACs feature glass-passivated junctions to ensure a rugged and dependable The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative...
|
Littelfuse
|
STB55NE06 5405 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET(不适用沟道增强模式功率MOSFET的) N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
MN102H73K MN102H73G MN102H730F MN102H73 MN102H730 |
Microcomputer - 16bit - General Purpose With main clock operated 58 ns (at 3.0 V to 3.6 V, 34 MHz) With main clock operated 58 ns (at 3.0 V to 3.6 V 34 MHz)
|
PANASONIC[Panasonic Semiconductor] Panasonic Corporation
|
STG3684QTR STG3684 |
LOW VOLTAGE 0.5 OHM MAX DUAL SPD SWITCH WITH BREAK BEFORE MAKE FEATURE LOW VOLTAGE 0.5ohm MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
BF422 |
NPN Silicon Transistor (High voltage application Monitor equipment application)
|
http:// AUK corp
|
U2FWJ44M |
SWITCHING MODE POWER SUPPLY APPLICATION PORTABLE EQUIPMENT BATTERY APPLICATION
|
Toshiba Semiconductor
|
2N3906 |
PNP Silicon Transistor (General small signal application Switching application)
|
AUK corp
|
BC856UF |
PNP Silicon Transistor (General purpose application Switching application)
|
AUK[AUK corp]
|