| PART |
Description |
Maker |
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| AM2343P |
Low rDS(on) trench technology
|
TY Semiconductor Co., Ltd
|
| IRGPS4067DPBF |
Low VCE (on) Trench IGBT Technology
|
International Rectifier
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| FDG6316P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| KRF7325 |
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET
|
TY Semiconductor Co., Ltd
|
| FDD3860 FDD386008 |
N-Channel PowerTrench MOSFET 100V, 29A, High performance trench technology for extremely low
|
Fairchild Semiconductor
|
| MT2301 |
High performance trench technology for extremely low RDS(ON)
|
List of Unclassifed Man...
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