PART |
Description |
Maker |
SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30 Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
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INFINEON[Infineon Technologies AG]
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IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
AM2305P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
BUZ72L BUZ72LC67078-S1327-A2 BUZ72LSMD |
Power MOSFET, 100V, D²PAK , RDSon=0.2 Ohm, 10A, LL Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.2 Ohm, 10A, LL SIPMOS Power Transistor Single-coil dual-output step-down DC/DC converter for digital base band and multimedia processor supply SIPMOS Power Transistor
|
Infineon Technologies AG
|
KSM5800 |
High performance trench technology for extermly low Rdson
|
Kersemi Electronic Co.,...
|
AM3829P |
Low rDS(on) provides higher efficiency and extends battery life
|
TY Semiconductor Co., Ltd
|
AM2370N |
Low rDS(on) provides higher efficiency and extends battery life
|
TY Semiconductor Co., Ltd
|
IPW65R190C6 IPA65R190C6 IPP65R190C6 |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 650V CoolMOS C6 Power Transistor Extremely low losses due to very low FOM Rdson*Qg and Eoss
|
Infineon Technologies AG
|
BSP170P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30
|
Infineon
|
BSS131 |
Low Voltage MOSFETs - Small Signal MOSFET, 240V, SOT-23, RDSon=16.0 Ohm, 0.1A, LL
|
Infineon
|
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