| PART |
Description |
Maker |
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| CSC2611 |
1.250W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.100A Ic, 30 - 200 hFE.
HIGH VOLTAGE AMPLIFIER AND TV VIDEO OUTPUT
|
Continental Device India Limited
|
| 2SC1653 |
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 130V
|
TY Semiconductor Co., Ltd
|
| CSC1573R CSC1573AQ |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 100 - 220 hFE.
1.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.070A Ic, 60 - 150 hFE.
|
Continental Device India Limited
|
| KTC4373 |
High Voltage: VCEO=120V
|
TY Semiconductor Co., L...
|
| 2SA1415 |
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semiconductor Co., Ltd
|
| BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE.
|
Continental Device India Limited
|
| 2SD1006 |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
|
TY Semiconductor Co., Ltd
|
| 2SC4505 |
High breakdown voltage. (BVCEO = 400V) Low saturation voltage
|
TY Semiconductor Co., Ltd
|
| 2SA1923 |
High Voltage:VCBO=-400V Low Saturation Voltage:VCE(sat)=-1V(Max.)
|
TY Semiconductor Co., Ltd
|
