| PART |
Description |
Maker |
| 2SC3134 |
NPN Epitaxial Planar Silicon Transistors High Vebo, AF Amp Applications
|
SANYO
|
| FJP5027 FJP5027TU FJP5027R FJP5027RTU |
Wide SOA
High Speed Switching
High Voltage and High Reliability
NPN Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| BCP54-10 BCP56-10 BCP56 |
NPN Medium Power Transistor
High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 651-102-21 651-105-21 651-105-211309 651-105-23 65 |
high performance panel lamps
Colour diffused lens with a wide viewing angle
Suitable for high vibration applications
|
Marl International Limited
Marl International Limi...
|
| CNW139 CNW138 |
8-PIN WIDE BODY, HIGH-GAIN OPTOCOUPLERS
(CNW138 / CNW139) 8-Pin Wide Bodt High Gain Optocouplers
|
Fairchild Semiconductor
|
| GS8160Z18BGT-200IT GS8160Z18BGT-150IT GS8160Z36BGT |
Dual 2-wide 2-input AND-OR-Invert Gates 14-SOIC 0 to 70 35.7流水线和流量，通过同步唑的SRAM
INNOLINE: High Voltage Output Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 86% 35.7流水线和流量，通过同步唑的SRAM
Dual 2-wide 2-input AND-OR-Invert Gates 14-PDIP 0 to 70 35.7流水线和流量，通过同步唑的SRAM
18Mb Pipelined and Flow Through Synchronous NBT SRAM 35.7流水线和流量，通过同步唑的SRAM
RECTIFIER SCHOTTKY SINGLE 1A 30V 12A-Ifsm 0.42Vf 1A-IR SOD-123 3K/REEL
HIGH CURRENT SCHOTTKY DIODE
CAP 1000UF 50V ELECT FC RADIAL
|
GSI Technology
http://
Cypress Semiconductor Corp.
Electronic Theatre Controls, Inc.
|
| MC33181 MC33181D MC33181P MC34181 MC34184DTB MC331 |
Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers QUAD OP-AMP, 11500 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO14
Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers QUAD OP-AMP, 11000 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO14
(MC34182 / MC34184) Low Power / High Slew Rate / Wide Bandwidth / JFET Input Operational Amplifiers
Dual Precision Timer 14-PDIP -40 to 85
(MC33181 - MC33184) Low Power / High Slew Rate / Wide Bandwidth / JFET Input Operational Amplifiers
|
http://
Motorola Mobility Holdings, Inc.
ON Semiconductor
Motorola, Inc.
|
| HF50-12F |
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 纭??灏??????朵?绠?Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ADVANCED SEMICONDUCTOR INC
|
| ZX60-M-SERIES ZX60-2510M ZX60-2514M ZX60-2522M ZX6 |
High Isolation Amplifiers 50з, 0.5 to 5.9 GHz 500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
High Isolation Amplifiers 50? 0.5 to 5.9 GHz
From old datasheet system
High Isolation Amplifiers 50/ 0.5 to 5.9 GHz
|
MINI[Mini-Circuits]
|
| SST441 |
Wide Band High Gain
|
Micross
|
| ASI10730 VHB50-28S |
NPN Silicon RF Power Transistor(Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
