| PART |
Description |
Maker |
| K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08U0M-F K9K2G08Q0M- |
SSR H/S IO 230V 20A 4-32VDC
SSR H/S ZS 600V 70A 4-32VDC
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
ULTRA2 LVD SCSI INTERNAL CBL 3 256M × 8 128M的16位NAND闪存
DSUB 25 M PCR/A G
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9K2G08U0M-FIB0 K9K2G08U0M-VCB0 K9K2G08U0M-VIB0 K9 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MX25L25835E MX25L25835EMI10G |
256M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L25735F MX25L25735FMI10G MX25L25735FZ2I10G |
3V 256M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位）的CMOS闪存EEPROM的（32M的8位与非的EEPROM
|
Toshiba Corporation
Toshiba, Corp.
|
| K9K4G08U0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
SAMSUNG
|
| K9F1G08R0A K9K2G08U1A K9F1G08U0A |
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K2G08U0A |
256M x 8 Bit NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
| AD7542JN AD7542TQ AD7542SQ AD7542AQ AD7542KP AD754 |
Precision 12-Bit CMOS Multiplying I-OUT DAC, 4-Bit Bus
CMOS P-Compatible 12-Bit DAC
CMOS uP-COMPATIBLE 12-BIT DAC PARALLEL, 4 BITS INPUT LOADING, 0.25 us SETTLING TIME, 12-BIT DAC, CDIP16
|
AD[Analog Devices]
Analog Devices, Inc.
|
| MX23L25611 MX23L25611MC-12 23L25611-10 23L25611-12 |
256M-BIT (16M x 16 / 32M x 8) MASK ROM WITH PAGE MODE (SSOP ONLY)
|
MXIC
MCNIX[Macronix International]
|
| HN29V25611AT-50H |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Renesas Electronics Corporation
|
