| PART |
Description |
Maker |
| STY60NA20 6123 |
N-CHANNEL 200V - 0.030 OHM - 60A - FAST POWER MOS TRANSISTOR
N - CHANNEL 200V - 0.030ohm - 60 A - Max247 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 200V - 0.030 - 60 A - Max247 FAST POWER MOS TRANSISTOR
N-CHANNEL Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRF5Y31N20 |
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*)
|
IRF[International Rectifier]
|
| FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRC640 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
| IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)
|
International Rectifier
|
| FQB34N20L FQI34N20L FQB34N20LTMSB82076 FQB34N20LTM |
200V LOGIC N-Channel MOSFET 31 A, 200 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
200V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF630 FN1578 RF1S630SM |
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRF9610S IRF9610STRL IRF9610STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
CAP 3.9PF 50V /-0.1PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ 功率MOSFET（减振钢板基本\u003d-00V，的Rds（on）\u003d 3.0ohm，身份证\u003d- 1.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFR9210 IRFU9210 |
-200V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
| IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
