| PART |
Description |
Maker |
| SR1045C |
Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 45 V. Maximum average forward rectified current 10 A.
|
Bytes
|
| Q62705-K274 KPY33-RK |
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| RHFL4913S50-04V 5962F0253401VXA 5962F0253401VXC 59 |
THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 三端固定电压调节
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
RAD-HARD POSITIVE FIXED VOLTAGE REGULATORS
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| U1GC44 |
Average Forward Current Repetitive Peak Reverse Voltage Mini Plastic Mold Package
|
Toshiba Semiconductor
|
| NTE6006 NTE6007 NTE6008 NTE6009 NTE6011 NTE6010 |
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
Fast Recovery Rectifier / 40A / 200ns
Fast Recovery Rectifier 40A 200ns
Fast Recovery Rectifier, 40A, 200ns
|
NTE[NTE Electronics]
NTE Electronics, Inc.
|
| MBRF30H100CT MBR30H100CT MBRB30H100CT MBRB30H90CT |
High-Voltage Dual Schottky Rectifiers Forward Current 30A Maximum TJ 175C Reverse Voltage 90 to 100V
|
Vishay Intertechnology,Inc.
http://
ON Semiconductor
VISAY[Vishay Siliconix]
|
| NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A.
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Silicon Power Rectifier Diode / 12 Amp
Silicon Power Rectifier Diode 12 Amp
Silicon Power Rectifier Diode, 12 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
|
NTE[NTE Electronics]
|
| FLT012A0 FLT012A0SZ FLT012A0Z |
75Vdc Input Voltage Maximum; 12A Output Current Maximum
|
Lineage Power Corporation
|
| SS100 SS14 SS13 SS12 SS16 S100 |
Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A.
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
|
PanJit International Inc.
PanJit Semiconductors
Pan Jit International Inc.
|
| 2N5427 2N5428 2N3766 2N3767 2N3738 2N4240 2N4900 2 |
75 OHM BNC FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 2; FREQUENCY RANGE: 10 - 1,000 MHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.50 MAXIMUM; MAXIMUM
POWER TRANSISTORS
|
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| 2N5954 2N6373 2N6374 2N5956 2N5955 |
BNC FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 3; FREQUENCY RANGE: 2 - 200 MHz; MINIMUM ISOLATION: 25 dB; VSWR: 1.35 MAXIMUM; MAXIMUM INSERTION
COMPLEMENTARY SILICON POWER TRANSISTORS
|
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
