PART |
Description |
Maker |
KM616U4000B |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
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K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F40 |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM 70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
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Samsung Electronic
|
V53C104 V53C104P-12 V53C104Z-70 V53C104Z-70L V53C1 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
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AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM(带单片使能 2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
|
Alliance Semiconductor Corporation Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
EM611FP16E-55LF EM611FU16E-55LF EM611FU8E-55LF EM6 |
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
|
http:// Emerging Memory & Logic Solutions Inc Emerging Memory & Logic...
|
AS6C2008 |
256K X 8 BIT LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
LY62L2568PL-55LLE LY62L2568RL-55LLE LY62L2568GL-55 |
256K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
BS62LV2006SCP55 BS62LV2006STC55 BS62LV2006HIG55 BS |
Very Low Power CMOS SRAM 256K X 8 bit
|
Brilliance Semiconducto... Brilliance Semiconductor
|
MB84256A-70 MB84256A-10P MB84256A-70LLP MB84256A-7 |
CMOS 256K-BIT LOW POWER SRAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
BS616LV4016 BS616LV4016EIP70 BS616LV4016AC BS616LV |
Asynchronous 4M(256Kx16) bits Static RAM From old datasheet system Circular Connector; No. of Contacts:55; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:16-35 RoHS Compliant: No Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16 JT 8C 8#16 SKT WALL RECP 非常低功电压CMOS SRAM56 × 16 Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM256 × 16
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BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC. Brilliance Semiconducto...
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LP62S2048A-I LP62S2048AM-55LLI LP62S2048AM-70LLI L |
256K X 8 BIT LOW VOLTAGE CMOS SRAM 256K × 8位低电压CMOS的SRAM ER 22C 18#16 4#12 SKT PLUG
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AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
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