| PART |
Description |
Maker |
| IRFB3006PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFB4310ZGPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF7452QPBF10 |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF1010EPBF |
HEXFETPower MOSFET ㈢的HEXFET功率MOSFET
|
International Rectifier, Corp.
|
| IRFZ44VZSPBF |
HEXFETPower MOSFET ( VDSS = 60V , RDS(on) = 12m, ID = 57A )
|
International Rectifier
|
| IRLML0040TRPBF |
HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses
|
TY Semiconductor Co., Ltd
|
| IRFZ44ZLPBF |
HEXFETPower MOSFET ( VDSS = 55V , RDS(on) = 13.9m, ID = 51A ) ㈢的HEXFET功率MOSFET（减振钢板基本\u003d 55V的，的RDS（on）\u003d十三点九米ヘ，身份证\u003d 51A条）
|
International Rectifier, Corp.
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| VMO550-01F |
HiPerFET MOSFET Module 590 A, 100 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET
MOSFET Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| BR211-280 BR211 BR211-140 BR211-160 BR211-180 BR21 |
Breakover diodes 314 V, SYMMETRICAL BOD
MOSFET N-CH 500V 3A TO-220
MOSFET N-CH 600V 2A TO-220
MOSFET N-CH 1.2KV 3A TO-220AB
MOSFET N-CH 500V 1A TO-220
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IXTA10N60P IXTP10N60P IXTI10N60P |
MOSFET N-CH 600V 10A D2-PAK 10 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
PolarHV Power MOSFET
|
Infineon Technologies AG
IXYS CORP
IXYS Corporation
|
